npn silicon darlington power transistor the bu323ap is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. ? collectoremitter sustaining voltage e v cer(sus) = 475 vdc ? 125 watts capability at 50 volts ? v ce sat specified at 40 c = 2.0 v max. at i c = 6.0 a ? photoglass passivation for reliability and stability ????????????????????????????????? ????????????????????????????????? maximum ratings ????????????????? ????????????????? rating ??????? ??????? symbol ???????? ???????? value ???? ???? unit ????????????????? ????????????????? collectoremitter voltage ??????? ??????? v ceo(sus) ???????? ???????? 400 ???? ???? vdc ????????????????? ????????????????? collectoremitter voltage ??????? ??????? v cev ???????? ???????? 475 ???? ???? vdc ????????????????? ????????????????? emitterbase voltage ??????? ??????? v eb ???????? ???????? 6.0 ???? ???? vdc ????????????????? ? ??????????????? ? ????????????????? collector current e continuous e peak (note 1) ??????? ? ????? ? ??????? i c i cm ???????? ? ?????? ? ???????? 10 16 ???? ? ?? ? ???? adc ????????????????? ? ??????????????? ? ????????????????? base current e continuous e peak (note 1) ??????? ? ????? ? ??????? i b i bm ???????? ? ?????? ? ???????? 3.0 ???? ? ?? ? ???? adc ????????????????? ? ??????????????? ? ????????????????? total power dissipation e t c = 25 c e t c = 100 c derate above 25 c ??????? ? ????? ? ??????? p d ???????? ? ?????? ? ???????? 125 100 1.0 ???? ? ?? ? ???? watts watts w/ c ????????????????? ????????????????? operating and storage junction temperature range ??????? ??????? t j , t stg ???????? ???????? 65 to +200 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ????????????????? ????????????????? characteristic ??????? ??????? symbol ???????? ???????? max ???? ???? unit ????????????????? ????????????????? thermal resistance, junction to case ??????? ??????? r q jc ???????? ???????? 1.0 ???? ???? c/w ????????????????? ? ??????????????? ? ????????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ??????? ? ????? ? ??????? t l ???????? ? ?????? ? ???????? 275 ???? ? ?? ? ???? c (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 11 1 publication order number: bu323ap/d bu323ap darlington npn silicon power transistor 400 volts 125 watts case 340d02 to218 type collector emitter base 1 k 30
bu323ap http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics 1 ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (figure 1) l = 10 mh (i c = 200 madc, i b = 0, v clamp = rated v ceo ) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 400 ???? ? ?? ? ???? ???? ? ?? ? ???? ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (figure 1) (i c = 3 a, r be = 100 ohms, l = 500 m h) unclamped ????? ? ??? ? ? ??? ? ????? v cer(sus) ??? ? ? ? ? ? ? ??? 475 ???? ? ?? ? ? ?? ? ???? ???? ? ?? ? ? ?? ? ???? ??? ? ? ? ? ? ? ??? vdc ??????????????????? ??????????????????? collector cutoff current (rated v cer , r be = 100 ohms) ????? ????? i cer ??? ??? ???? ???? ???? ???? 1 ??? ??? madc ??????????????????? ??????????????????? collector cutoff current (rated v cbo , i e = 0) ????? ????? i cbo ??? ??? ???? ???? ???? ???? 1 ??? ??? madc ??????????????????? ??????????????????? emitter cutoff current (v eb = 6 vdc, i c = 0) ????? ????? i ebo ??? ??? ???? ???? ???? ???? 40 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics 1 ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 3 adc, v ce = 6 vdc) (i c = 6 adc, v ce = 6 vdc) (i c = 10 adc, v ce = 6 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 300 150 50 ???? ? ?? ? ? ?? ? ???? 550 350 150 ???? ? ?? ? ? ?? ? ???? 2000 ??? ? ? ? ? ? ? ??? ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 3 adc, i b = 60 madc) (i c = 6 adc, i b = 120 madc) (i c = 10 adc, i b = 300 madc (i c = 6 adc, i b = 120 madc, t c = 40 c) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? ???? ? ?? ? ? ?? ? ???? 1.5 1.7 2.7 2.0 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 6 adc, i b = 120 madc) (i c = 10 adc, i b = 300 madc) (i c = 6 adc, i b = 120 madc, t c = 40 c) ????? ? ??? ? ? ??? ? ????? v be(sat) ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? ???? ? ?? ? ? ?? ? ???? 2.2 3 2.4 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ??????????????????? baseemitter on voltage (i c = 10 adc, v ce = 6 vdc) ????? ????? v be(on) ??? ??? ???? ???? ???? ???? 2.5 ??? ??? vdc ??????????????????? ??????????????????? diode forward voltage (i f = 10 adc) ????? ????? v f ??? ??? ???? ???? 2 ???? ???? 3.5 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f test = 100 khz) ????? ????? c ob ??? ??? ???? ???? 165 ???? ???? 350 ??? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ?????? ?????? storage time ?????????????? ?????????????? (v cc = 12 vdc, i c = 6 adc, ????? ????? t s ??? ??? ???? ???? 7.5 ???? ???? 15 ??? ??? m s ?????? ?????? fall time ?????????????? ?????????????? (v cc 12 vdc , i c 6 adc , i b1 = i b2 = 0.3 adc) fig. 2 ????? ????? t f ??? ??? ???? ???? 5.2 ???? ???? 15 ??? ??? m s ????????????????????????????????? ????????????????????????????????? functional tests ??????????????????? ? ????????????????? ? ??????????????????? second breakdown collector current with baseforward biased ????? ? ??? ? ????? i s/b ??? ? ? ? ??? ???? ? ?? ? ???? see figure 10 ???? ? ?? ? ???? ??? ? ? ? ??? ??????????????????? ??????????????????? pulsed energy test (see figure 12) ????? ????? i c 2 l /2 ??? ??? 550 ???? ???? ???? ???? ??? ??? mj 1 pulse test: pulse width = 300 m s, duty cycle = 2%.
bu323ap http://onsemi.com 3 0 v t 1 20 ms * 470 1k 30 l 47 1n4001 bc337 v ceo v cer 100 b tut c * e v clamp unclamped clamped * adjust t 1 such that * i c reaches required * value. v cc = 16 vdc f test = 200 hz pulse width = 1 ms 1k 30 b tut c e 40 51 100 i b = 0.3 adc v cc = 12 vdc 2 w /20 w i c = 6 adc 15 vdc 0 vdc 1n4001 figure 1. sustaining voltage test circuit figure 2. switching times test circuit
bu323ap http://onsemi.com 4 , collector current (a) m i c v ce , collector-emitter voltage (volts) 2000 0.1 figure 3. dc current gain i c , collector current (amp) 20 0.2 0.3 0.5 0.7 1 5 7 10 500 200 100 70 figure 4. collector saturation region 3 0.002 i b , base current (amp) 0.5 0.005 0.01 0.02 0.05 0.2 0.5 1 2 2.5 2 1.5 1 i c = 0.5 a t j = 25 c 3 10 a 700 300 h fe , dc current gain t j = 150 c 25 c 50 30 23 0.1 1.7 0.1 figure 5. collectoremitter saturation voltage i c , collector current (a) 0.2 0.5 1.0 2.0 10 1.6 1.4 1.3 0.5 i c /i b = 50 t j = 25 c 1.5 figure 6. baseemitter voltage 1000 v ce = 3 vdc v ce = 6 vdc 6 v ce(sat) , collector-emitter saturation voltage (v) 1.2 1.1 0.9 0.8 1.0 0.7 0.6 5.0 2.2 0.1 i c , collector current (a) 0.2 0.5 1.0 2.0 10 2.1 1.9 1.8 1.0 2.0 1.7 1.6 1.4 1.3 1.5 1.2 1.1 5.0 t j = 25 c figure 7. turnoff switching time 10 0.2 i c , collector current (amp) 0.1 0.3 0.5 0.7 1 3 5 20 t j = 25 c i c /i b = 20 v ce = 12 vdc t, time (s) m 2 7 5 3 2 1 t s 0.7 0.5 0.3 0.2 710 t f figure 8. collector cutoff region 10 4 -0.2 v be , base-emitter voltage (volts) 10 -1 0 +0.2 10 3 10 2 10 1 10 0 +0.4 +0.6 +0.8 reverse v ce = 250 vdc t j = 150 c i c = i ces 75 c 25 c t j = -40 c t j = -40 c v ce(sat) , collector-emitter saturation voltage (v) forward
bu323ap http://onsemi.com 5 figure 9. thermal response t, time (ms) 1 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance 0.05 1 2 5 10 20 50 100 200 2000 500 r q jc (t) = r(t) r q jc r q jc = c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2 (normalized) 1000 50 5 figure 10. forward bias safe operating area v ce , collector-emitter voltage (volts) 20 10 5 1 0.005 30 70 bonding wire limit thermal limit (single pulse) second breakdown limit i c , collector current (amp) dc 100 m s 0.2 0.01 10 20 5.0 ms 1.0 ms 100 200 300 500 2 0.1 50 t c = 25 c there are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t c = 25 c, t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 10 may be found at any case temperature by using the appropriate curve on figure 11. t j(pk) may be calculated from the data in figure 11. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 0 figure 11. power derating t c , case temperature ( c) 80 0 80 120 power derating factor (%) 40 20 40 160 200 60 thermal derating second breakdown derating figure 12. ignition test circuit 0 vdc t 1 50 ms 1k 30 b 470 v cc = 16 vdc 1n4001 bc337 47 v z c e tut 2.2 0.22 m f 100 1n4001 <1 11 mh inductive load t 1 to be selected such that i c reaches 10 adc before switchoff. note: figure 12 specifies energy handling capabilities in an automotive ignition circuit. v z = 350 v (bu323p) v z = 400 v (bu323ap) at i z = 20 ma
bu323ap http://onsemi.com 6 package dimensions case 340d02 to218 type issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
bu323ap http://onsemi.com 7 notes
bu323ap http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bu323ap/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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